SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值
更快的写入速度，GB/s

2,303.7 12.4

测试中的平均数值

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 117

左右 -318% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 28
读取速度，GB/s

3,094.8 16.2
写入速度，GB/s

2,303.7 12.4
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 3305

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB