SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Crucial Technology CT4G4DFS8266.M8FE 4GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值

Crucial Technology CT4G4DFS8266.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

74 117

左右 -58% 更低的延时
更快的写入速度，GB/s

8.0 2,303.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 74
读取速度，GB/s

3,094.8 15.4
写入速度，GB/s

2,303.7 8.0
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 1714

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL15-17-17 D4-3000 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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A-DATA Technology DDR4 2666 2OZ 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Samsung M393A2K40CB2-CTD 16GB