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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
总分
SK Hynix HYMP31GF72CMP4D5Y5 8GB
总分
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB
报告一个错误
更快的读取速度,GB/s
3
16.6
测试中的平均数值
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
117
左右 -409% 更低的延时
更快的写入速度,GB/s
8.9
2,303.7
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
117
23
读取速度,GB/s
3,094.8
16.6
写入速度,GB/s
2,303.7
8.9
内存带宽,mbps
5300
21300
Other
描述
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
784
2631
SK Hynix HYMP31GF72CMP4D5Y5 8GB RAM的比较
takeMS International AG TMS2GS264D081805AW 2GB
Kingston 9905315-124.A00LF 1GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kllisre 8ATF1G64AZ-2G6H1 8GB
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Micron Technology 18ADF2G72AZ-2G3B1 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Samsung M395T2863QZ4-CF76 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2K4266C19 8GB
Micron Technology 18HTF12872AY-800F1 1GB
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SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
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Micron Technology 16ATF2G64HZ-2G3E1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix GKE160SO102408-3000 16GB
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
报告一个错误
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