SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Kingston 9905663-006.A00G 16GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 12.4

测试中的平均数值

Kingston 9905663-006.A00G 16GB

需要考虑的原因
Kingston 9905663-006.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 117

左右 -333% 更低的延时
更快的写入速度，GB/s

6.8 2,303.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905663-006.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 27
读取速度，GB/s

3,094.8 12.4
写入速度，GB/s

2,303.7 6.8
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 2067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9965640-008.A01G 32GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

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Kingston 9965669-018.A00G 16GB

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Kingston 9965525-018.A00LF 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB