SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Micron Technology 9ASF1G72PZ-2G3B1 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

Micron Technology 9ASF1G72PZ-2G3B1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

58 117

左右 -102% 更低的延时
更快的读取速度，GB/s

9.7 3

测试中的平均数值
更快的写入速度，GB/s

7.5 2,303.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 58
读取速度，GB/s

3,094.8 9.7
写入速度，GB/s

2,303.7 7.5
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 2172

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Shenzhen Technology Co Ltd 8GB

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Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CB16GS2666.C8ET 16GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

V-GEN D4H8GL36A8TXV 8GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Kingston KHX16LC9/8GX 8GB

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Corsair CMK32GX4M2B3200C16 16GB

Corsair CMK32GX4M2B3200C16 16GB