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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M378A2K43CB1-CTD 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Samsung M378A2K43CB1-CTD 16GB

总分
star star star star star
SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分
star star star star star
Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

差异 规格 评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB 需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,303.7 left arrow 12.0
    测试中的平均数值
Samsung M378A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M378A2K43CB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 117
    左右 -255% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M378A2K43CB1-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    117 left arrow 33
  • 读取速度，GB/s
    3,094.8 left arrow 16.2
  • 写入速度，GB/s
    2,303.7 left arrow 12.0
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3116

SK Hynix HYMP31GF72CMP4D5Y5 8GB RAM的比较

takeMS International AG TMS2GS264D081805AW 2GB
Kingston 9905315-124.A00LF 1GB

Samsung M378A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3000C14-16GVKD 16GB
G Skill Intl F4-3000C14-16GVKD 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Corsair CMZ4GX3M1A1600C9 4GB
Corsair CMZ4GX3M1A1600C9 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
内存RAM