SK Hynix HYMP512S64CP8-Y5 1GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 68

左右 -134% 更低的延时
更快的写入速度，GB/s

15.9 1,670.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 29
读取速度，GB/s

3,554.9 18.2
写入速度，GB/s

1,670.7 15.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

513 3866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 2666 8GB

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Samsung M395T5160QZ4-CE66 2GB

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Corsair CMU16GX4M2C3000C15 8GB

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Corsair CMK16GX4M1A2666C16 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9965589-005.A01G 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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