SK Hynix HYMP512U64CP8-Y5 1GB vs Corsair CMK8GX4M2B4266C19 4GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 20.9

测试中的平均数值

Corsair CMK8GX4M2B4266C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4266C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 63

左右 -250% 更低的延时
更快的写入速度，GB/s

16.7 1,583.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

Corsair CMK8GX4M2B4266C19 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 18
读取速度，GB/s

3,895.6 20.9
写入速度，GB/s

1,583.7 16.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

639 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-8GSXKB 8GB

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Crucial Technology CT8G4SFD824A.C16FADP 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

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Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-2800C15-8GVR 8GB

G Skill Intl F4-2800C15-8GVR 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB