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SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-4000C17-16GTZRB 16GB

SK Hynix HYMP512U64CP8-Y5 1GB vs G Skill Intl F4-4000C17-16GTZRB 16GB

总分
star star star star star
SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分
star star star star star
G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

差异 规格 评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20.2
    测试中的平均数值
G Skill Intl F4-4000C17-16GTZRB 16GB 需要考虑的原因
G Skill Intl F4-4000C17-16GTZRB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 63
    左右 -110% 更低的延时
  • 更快的写入速度，GB/s
    16.9 left arrow 1,583.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-4000C17-16GTZRB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 30
  • 读取速度，GB/s
    3,895.6 left arrow 20.2
  • 写入速度，GB/s
    1,583.7 left arrow 16.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    639 left arrow 3844

SK Hynix HYMP512U64CP8-Y5 1GB RAM的比较

Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB

G Skill Intl F4-4000C17-16GTZRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-4000C17-16GTZRB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3600C17-8GVK 8GB
G Skill Intl F4-3600C17-8GVK 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Panram International Corporation PUD43000C154G4NJW 4GB
Panram International Corporation PUD43000C154G4NJW 4GB
内存RAM
Kingmax Semiconductor FLGE85F-C8KJ9A 2GB
Kingmax Semiconductor FLGE85F-C8KJ9A 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMD64GX4M4A2666C15 16GB
Corsair CMD64GX4M4A2666C15 16GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM