SK Hynix HYMP512U64CP8-Y5 1GB vs G Skill Intl F4-4000C18-16GTZN 16GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 20.1

测试中的平均数值

G Skill Intl F4-4000C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的写入速度，GB/s

16.4 1,583.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

G Skill Intl F4-4000C18-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

3,895.6 20.1
写入速度，GB/s

1,583.7 16.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

639 3823

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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G Skill Intl F4-4000C18-16GTZN 16GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Kingston 9905403-090.A01LF 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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G Skill Intl F4-4000C17-16GTRGB 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB