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SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M378A2K43CB1-CTD 16GB

SK Hynix HYMP512U64CP8-Y5 1GB vs Samsung M378A2K43CB1-CTD 16GB

总分
star star star star star
SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分
star star star star star
Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

差异 规格 评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.2
    测试中的平均数值
Samsung M378A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M378A2K43CB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 63
    左右 -91% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,583.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M378A2K43CB1-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 33
  • 读取速度，GB/s
    3,895.6 left arrow 16.2
  • 写入速度，GB/s
    1,583.7 left arrow 12.0
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    639 left arrow 3116

SK Hynix HYMP512U64CP8-Y5 1GB RAM的比较

Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB

Samsung M378A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kingston KC5N22-MIE 16GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Apacer Technology 76.D305G.D390B 16GB
Apacer Technology 76.D305G.D390B 16GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Corsair CMK16GX4M2Z2933C16 8GB
Corsair CMK16GX4M2Z2933C16 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMT32GX4M2C3466C16 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Kingston 9905702-136.A00G 8GB
Kingston 9905702-136.A00G 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CM4X4GF2133C15S2 4GB
Corsair CM4X4GF2133C15S2 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM