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Smart Modular SF564128CJ8N6NNSEG 4GB
Golden Empire CL19-19-19 D4-2666 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB vs Golden Empire CL19-19-19 D4-2666 4GB

总分
star star star star star
Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分
star star star star star
Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

差异 规格 评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB 需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB
报告一个错误
Golden Empire CL19-19-19 D4-2666 4GB 需要考虑的原因
Golden Empire CL19-19-19 D4-2666 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Smart Modular SF564128CJ8N6NNSEG 4GB
Golden Empire CL19-19-19 D4-2666 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 32
  • 读取速度，GB/s
    12.3 left arrow 15.7
  • 写入速度，GB/s
    7.3 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1570 left arrow 2987

Smart Modular SF564128CJ8N6NNSEG 4GB RAM的比较

Smart Modular SH564128FH8N6TNSQG 4GB
Corsair CMK8GX4M1E3200C16 8GB

Golden Empire CL19-19-19 D4-2666 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM