Smart Modular SG564568FG8N6KF-Z2 2GB vs G Skill Intl F4-4400C19-8GTZSW 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 22.1

测试中的平均数值
更快的写入速度，GB/s

3,071.4 18.6

测试中的平均数值

G Skill Intl F4-4400C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4400C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 70

左右 -338% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 16
读取速度，GB/s

4,372.7 22.1
写入速度，GB/s

3,071.4 18.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3906

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

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Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 36JSF2G72PZ-1G9N1 16GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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JUHOR JHD2666U1916JG 16GB

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Avant Technology W641GU42J5213N3 8GB

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Kingston 9965525-058.A00LF 8GB

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Crucial Technology BLS4G4S240FSD.8FAR 4GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Corsair CMD16GX4M4B3000C15 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB