Smart Modular SG564568FG8N6KF-Z2 2GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

3,071.4 12.5

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 70

左右 -84% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 38
读取速度，GB/s

4,372.7 15.0
写入速度，GB/s

3,071.4 12.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Mushkin 99[2/7/4]204[F/T] 4GB

Mushkin 99[2/7/4]204[F/T] 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK32GX4M2B3000C15 16GB

Corsair CMK32GX4M2B3000C15 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB