Smart Modular SH564128FH8NZQNSCG 4GB vs Corsair CMT16GX4M2C3200C14 8GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Corsair CMT16GX4M2C3200C14 8GB

需要考虑的原因
Corsair CMT16GX4M2C3200C14 8GB

报告一个错误

更快的读取速度，GB/s

17 9.4

测试中的平均数值
更快的写入速度，GB/s

11.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMT16GX4M2C3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

9.4 17.0
写入速度，GB/s

5.5 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M3 78T2863EHS-CF7 1GB

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Hewlett-Packard 7EH67AA# 8GB

Hewlett-Packard 7EH67AA# 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Panram International Corporation W4U2133PS-8G 8GB

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Kingston 99U5584-005.A00LF 4GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB