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SpecTek Incorporated ?????????????????? 2GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB

SpecTek Incorporated ?????????????????? 2GB vs Micron Technology 18ADF1G72PZ-2G1A1 8GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Micron Technology 18ADF1G72PZ-2G1A1 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
Micron Technology 18ADF1G72PZ-2G1A1 8GB 需要考虑的原因
Micron Technology 18ADF1G72PZ-2G1A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 54
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    9.2 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 32
  • 读取速度，GB/s
    4,269.3 left arrow 9.2
  • 写入速度，GB/s
    1,781.8 left arrow 6.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    618 left arrow 2017

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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内存RAM
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内存RAM
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Samsung M393B1K70QB0-CK0 8GB
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内存RAM
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
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内存RAM
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Elpida EBJ10UE8BAFA-AE-E 1GB
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内存RAM
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G Skill Intl F4-3200C16-4GRB 4GB
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