SpecTek Incorporated ?????????????????? 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

SpecTek Incorporated ?????????????????? 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

SpecTek Incorporated ?????????????????? 2GB

需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB

报告一个错误

低于PassMark测试中的延时，ns

54 56

左右 4% 更低的延时
更快的读取速度，GB/s

4 20.1

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的写入速度，GB/s

10.5 1,781.8

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SpecTek Incorporated ?????????????????? 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 56
读取速度，GB/s

4,269.3 20.1
写入速度，GB/s

1,781.8 10.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

618 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Panram International Corporation PUD42400C154GNJW 4GB

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SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Kingston 99U5474-010.A00LF 2GB

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Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Samsung M378A1K43EB2-CWE 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston KHX2400C15D4/16GX 16GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB