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SpecTek Incorporated ?????????????????? 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

SpecTek Incorporated ?????????????????? 2GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 72
    左右 25% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.3
    测试中的平均数值
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB 需要考虑的原因
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 72
  • 读取速度，GB/s
    4,269.3 left arrow 15.3
  • 写入速度，GB/s
    1,781.8 left arrow 8.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    618 left arrow 1593

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
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G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
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Apacer Technology GD2.1129WH.001 16GB
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Kingston 9905403-061.A00LF 2GB
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A-DATA Technology DQVE1908 512MB
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Kllisre 0000 8GB
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Kingston HP16D3LS1KBGH/4G 4GB
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Nanya Technology M471A5143EB1-CRC 4GB
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PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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A-DATA Technology DDR3 1600 4GB
Corsair CMK32GX4M4A2666C16 8GB
Corsair CMK32GX4M4A2666C16 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM