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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Chun Well Technology Holding Limited D4U1636144B 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Chun Well Technology Holding Limited D4U1636144B 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
23.7
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
63
左右 -142% 更低的延时
更快的写入速度,GB/s
18.3
1,447.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
26
读取速度,GB/s
3,231.0
23.7
写入速度,GB/s
1,447.3
18.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
478
4124
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB RAM的比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU32GX4M2C3000C16 16GB
Kingston 9905403-444.A00LF 4GB
Kingston HP26D4U9D8HC-16X 16GB
Kingston 99U5403-036.A00G 4GB
Corsair CMD32GX4M4B2800C14 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMSX16GX4M2A3000C18 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C18-32GRS 32GB
Samsung M471B5273EB0-CK0 4GB
Kingston KCRXJ6-HYJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMU16GX4M2C3000C15 8GB
Samsung M378B5673FH0-CH9 2GB
JUHOR JHD3000U1908JG 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
AMD AE34G1601U1 4GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
报告一个错误
×
Bug description
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