STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMK16GX4M2B3466C16 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMK16GX4M2B3466C16 8GB

Corsair CMK16GX4M2B3466C16 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 19.7

测试中的平均数值

Corsair CMK16GX4M2B3466C16 8GB

需要考虑的原因
Corsair CMK16GX4M2B3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 63

左右 -142% 更低的延时
更快的写入速度，GB/s

15.0 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK16GX4M2B3466C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 26
读取速度，GB/s

3,231.0 19.7
写入速度，GB/s

1,447.3 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 3452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

Corsair CM4X16GC3200C16K4 16GB

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Samsung M471A5244CB0-CWE 4GB

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Kingston 99U5474-022.A00LF 2GB

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Kingston HP32D4U8S8HD-8X 8GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair CMD8GX4M2B3866C18 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N