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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BL16G30C15U4B.16FE 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BL16G30C15U4B.16FE 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
20
测试中的平均数值
需要考虑的原因
Crucial Technology BL16G30C15U4B.16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
63
左右 -91% 更低的延时
更快的写入速度,GB/s
14.7
1,447.3
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
33
读取速度,GB/s
3,231.0
20.0
写入速度,GB/s
1,447.3
14.7
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
478
3462
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix GKE800SO51208-2133AH 8GB
Samsung M378A1G43TB1-CTD 8GB
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Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C18-16GTZN 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2400C15D4/8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK128GX4M8B3200C16 16GB
报告一个错误
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Bug description
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