STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology CT4G4DFS8213.C8FADP 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 63

左右 -97% 更低的延时
更快的写入速度，GB/s

10.8 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 32
读取速度，GB/s

3,231.0 14.5
写入速度，GB/s

1,447.3 10.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2399

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2666C13/16GX 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Mushkin MR[A/B]4U346GJJM8G 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT4G4DFS8213.C8FADP 4GB

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Kingston 9965662-016.A00G 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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EVGA 16G-D4-2666-MR 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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G Skill Intl F4-4000C18-8GTZSW 8GB

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Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB