STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs DSL Memory D4SS12082SH21A-A 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

DSL Memory D4SS12082SH21A-A 8GB

需要考虑的原因
DSL Memory D4SS12082SH21A-A 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 63

左右 -163% 更低的延时
更快的写入速度，GB/s

7.3 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

DSL Memory D4SS12082SH21A-A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 24
读取速度，GB/s

3,231.0 14.4
写入速度，GB/s

1,447.3 7.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ADF2G72AZ-2G3B1 16GB

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G Skill Intl F4-2400C15-8GFX 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology BLS4G4S240FSD.8FAR 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMK128GX4M8A2133C13 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

Kingston CBD24D4S7D8MA-16 16GB

Kingston CBD24D4S7D8MA-16 16GB