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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited KD44GU481-26N1600 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Essencore Limited KD44GU481-26N1600 4GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 71
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 15.1
    测试中的平均数值
Essencore Limited KD44GU481-26N1600 4GB 需要考虑的原因
Essencore Limited KD44GU481-26N1600 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.2 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited KD44GU481-26N1600 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 71
  • 读取速度，GB/s
    3,231.0 left arrow 15.1
  • 写入速度，GB/s
    1,447.3 left arrow 8.2
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    478 left arrow 1813

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Essencore Limited KD44GU481-26N1600 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited KD44GU481-26N1600 4GB
Essencore Limited KD44GU481-26N1600 4GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Avant Technology W641GU42J7240NC 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK64GX4M8A2400C14 8GB
Corsair CMK64GX4M8A2400C14 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM