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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-8GTZR 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3600C17-8GTZR 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.5
    测试中的平均数值
G Skill Intl F4-3600C17-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 63
    左右 -117% 更低的延时
  • 更快的写入速度，GB/s
    15.7 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 29
  • 读取速度，GB/s
    3,231.0 left arrow 18.5
  • 写入速度，GB/s
    1,447.3 left arrow 15.7
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    478 left arrow 3676

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

G Skill Intl F4-3600C17-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-8GTZR 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9905713-019.A00G 4GB
Kingston 9905713-019.A00G 4GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM