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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905665-009.A00G 4GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston 9905665-009.A00G 4GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Kingston 9905665-009.A00G 4GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
16
测试中的平均数值
需要考虑的原因
Kingston 9905665-009.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
63
左右 -133% 更低的延时
更快的写入速度,GB/s
11.1
1,447.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905665-009.A00G 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
27
读取速度,GB/s
3,231.0
16.0
写入速度,GB/s
1,447.3
11.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
478
2494
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Kingston 9905665-009.A00G 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378B5173BH0-CH9 4GB
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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung M471B1G73BH0-CH9 8GB
Panram International Corporation M424016 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965669-005.A01G 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK32GX4M2E3200C16 16GB
报告一个错误
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Bug description
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