STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston ACR32D4U2S1ME-8 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值

Kingston ACR32D4U2S1ME-8 8GB

需要考虑的原因
Kingston ACR32D4U2S1ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的写入速度，GB/s

11.5 1,447.3

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston ACR32D4U2S1ME-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

3,231.0 17.4
写入速度，GB/s

1,447.3 11.5
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

478 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF2666C16D4/16G 16GB

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G Skill Intl F4-4000C18-16GTRS 16GB

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Kingston 99U5474-038.A00LF 4GB

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Kingmax Semiconductor GSAF62F-D8---------- 4GB

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A-DATA Technology AD4S320038G22-B 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB

SK Hynix HYMP512S64CP8-Y5 1GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB