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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HX424C15PB/4 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston HX424C15PB/4 4GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 68
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 15.5
    测试中的平均数值
Kingston HX424C15PB/4 4GB 需要考虑的原因
Kingston HX424C15PB/4 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.9 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HX424C15PB/4 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 68
  • 读取速度，GB/s
    3,231.0 left arrow 15.5
  • 写入速度，GB/s
    1,447.3 left arrow 6.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    478 left arrow 1310

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Kingston HX424C15PB/4 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston HX424C15PB/4 4GB
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Samsung 1600 CL10 Series 8GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingmax Semiconductor GLLF62F-DA---------- 4GB
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内存RAM
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内存RAM
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Corsair CMH32GX4M2Z3600C18 16GB
内存RAM
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Kingston KF552C40-16 16GB
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内存RAM
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内存RAM
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