STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston XJ69DF-MIE 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值

Kingston XJ69DF-MIE 8GB

需要考虑的原因
Kingston XJ69DF-MIE 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 63

左右 -97% 更低的延时
更快的写入速度，GB/s

13.5 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston XJ69DF-MIE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 32
读取速度，GB/s

3,231.0 16.3
写入速度，GB/s

1,447.3 13.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 3117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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AMD R5316G1609U2K 8GB

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Corsair CMD16GX3M4A2666C11 4GB

Samsung M471A2K43BB1-CTD 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston MSI24D4U7D8MD-16 16GB

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Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Corsair CMR64GX4M8X3800C19 8GB

Corsair CMR64GX4M8X3800C19 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB