STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的写入速度，GB/s

10.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

3,231.0 13.7
写入速度，GB/s

1,447.3 10.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-16GFXR 16GB

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Corsair CMK32GX4M2F4000C19 16GB

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Corsair CM3B4G2C1600L9 4GB

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InnoDisk Corporation M4S0-AGS1O5IK 16GB

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-3466C16-8GTZSK 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-3200C15-8GTZ 8GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS16G4D30BESB.16FD 16GB