STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3E2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 63

左右 -133% 更低的延时
更快的写入速度，GB/s

13.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 27
读取速度，GB/s

3,231.0 16.5
写入速度，GB/s

1,447.3 13.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3600C16-8GVK 8GB

G Skill Intl F4-3600C16-8GVK 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston KV0M5R-MIE 8GB

Kingston KV0M5R-MIE 8GB