STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 36ASF2G72PZ-2G4AT 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

Micron Technology 36ASF2G72PZ-2G4AT 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G4AT 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的读取速度，GB/s

9.8 3

测试中的平均数值
更快的写入速度，GB/s

7.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

3,231.0 9.8
写入速度，GB/s

1,447.3 7.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Neo Forza NMUD480E86-3200 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology BL32G36C16U4BL.M16FB 32GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-2133C15-16GVR 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB