STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 8ATF1G64AZ-2G1A1 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的写入速度，GB/s

11.0 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

3,231.0 15.2
写入速度，GB/s

1,447.3 11.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43EB2-CWE 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Kingston 9965525-155.A00LF 8GB

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Apacer Technology GD2.1831WS.002 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Samsung M393A1G40DB0-CPB 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston KHX3000C15/16GX 16GB

Kingston KHX3000C15/16GX 16GB