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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4641G8CKHI6DFSDS 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung SF4641G8CKHI6DFSDS 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.3
    测试中的平均数值
Samsung SF4641G8CKHI6DFSDS 8GB 需要考虑的原因
Samsung SF4641G8CKHI6DFSDS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 63
    左右 -125% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4641G8CKHI6DFSDS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 28
  • 读取速度，GB/s
    3,231.0 left arrow 15.3
  • 写入速度，GB/s
    1,447.3 left arrow 11.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    478 left arrow 2648

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Samsung SF4641G8CKHI6DFSDS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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最新比较

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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston KHX1600C9D3/8G 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung M393B1G70BH0-YK0 8GB
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Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
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内存RAM
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