STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Smart Modular SF4641G8CK8I6GKSEG 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值

Smart Modular SF4641G8CK8I6GKSEG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8I6GKSEG 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的写入速度，GB/s

13.4 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

3,231.0 16.7
写入速度，GB/s

1,447.3 13.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 3008

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston KF3600C18D4/32GX 32GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905702-014.A00G 8GB

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Kingston KHX318C10FR/8G 8GB

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Kingston 9965589-008.D02G 8GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB