Strontium SRT8G86U1-P9H 8GB vs Corsair CMZ16GX3M2A1600C9 8GB

总分

Strontium SRT8G86U1-P9H 8GB

Strontium SRT8G86U1-P9H 8GB

总分

Corsair CMZ16GX3M2A1600C9 8GB

Corsair CMZ16GX3M2A1600C9 8GB

差异规格评论

差异

Strontium SRT8G86U1-P9H 8GB

需要考虑的原因
Strontium SRT8G86U1-P9H 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 33% 更低的延时
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Corsair CMZ16GX3M2A1600C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1600C9 8GB

报告一个错误

更快的读取速度，GB/s

14.3 12.1

测试中的平均数值
更快的写入速度，GB/s

8.7 7.5

测试中的平均数值

规格

完整的技术规格清单

Strontium SRT8G86U1-P9H 8GB

Corsair CMZ16GX3M2A1600C9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 40
读取速度，GB/s

12.1 14.3
写入速度，GB/s

7.5 8.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2097 2430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Essencore Limited IM44GU48N28-GGGHM 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology 78.CAGR9.40C0B 8GB

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Corsair CMW256GX4M8E3200C16 32GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 99U5702-094.A00G 8GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Kingston MSI24D4U7S8MH-8 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

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Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB