Swissbit MEU25664D6BC2EP-30 2GB vs Kingston X2YH1K-MIE 16GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值

Kingston X2YH1K-MIE 16GB

需要考虑的原因
Kingston X2YH1K-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 68

左右 -70% 更低的延时
更快的写入速度，GB/s

9.8 1,944.9

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Kingston X2YH1K-MIE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 40
读取速度，GB/s

3,973.0 16.6
写入速度，GB/s

1,944.9 9.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

673 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CM4X16GE2666C16K8 16GB

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Crucial Technology BL16G32C16U4R.M16FE 16GB

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G Skill Intl F4-3200C22-32GRS 32GB

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Kingston 9965596-023.B01G 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston MSI24D4S7S8MB-8 8GB

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Kingston 9905598-026.A00G 16GB

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Crucial Technology CT102464BF160B.C16 8GB

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G Skill Intl F4-2666C18-8GFX 8GB

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Peak Electronics 256X64M-67E 2GB

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Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Corsair CMT16GX4M2K4000C19 8GB

Corsair CMT16GX4M2K4000C19 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

Crucial Technology BL8G30C15U4R.M8FE 8GB