Swissbit MEU25664D6BC2EP-30 2GB vs Mushkin 99[2/7/4]199[F/T] 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Mushkin 99[2/7/4]199[F/T] 8GB

需要考虑的原因
Mushkin 99[2/7/4]199[F/T] 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 68

左右 -100% 更低的延时
更快的写入速度，GB/s

12.2 1,944.9

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Mushkin 99[2/7/4]199[F/T] 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 34
读取速度，GB/s

3,973.0 15.9
写入速度，GB/s

1,944.9 12.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

673 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Neo Forza GKE160SO204808-3200 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMW8GX4M1Z3200C16 8GB

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Kingston 99U5403-036.A00G 4GB

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Kingston 9965640-008.A01G 32GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston KHX2666C16D4/16GX 16GB

Kingston KHX2666C16D4/16GX 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK16GX4M2Z3600C20 8GB

Corsair CMK16GX4M2Z3600C20 8GB