Swissbit MEU25664D6BC2EP-30 2GB vs Samsung M471A5143EB1-CRC 4GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

低于PassMark测试中的延时，ns

68 95

左右 28% 更低的延时
更快的读取速度，GB/s

3 15.8

测试中的平均数值

Samsung M471A5143EB1-CRC 4GB

需要考虑的原因
Samsung M471A5143EB1-CRC 4GB

报告一个错误

更快的写入速度，GB/s

7.3 1,944.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Samsung M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 95
读取速度，GB/s

3,973.0 15.8
写入速度，GB/s

1,944.9 7.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

673 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Swissbit MEU25664D6BC2EP-30 2GB

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Samsung M471A5143EB1-CRC 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Ramaxel Technology RMUA5110MB78HAF-2400 8GB

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AMD R534G1601U1S-UO 4GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston KHX2133C11D3/4GX 4GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Kingston ACR16D3LS1KBG/8G 8GB

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SK Hynix HMA425S6AFR6N-UH 2GB

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V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB