Swissbit MEU25664D6BC2EP-30 2GB vs SK Hynix GKE800UD102408-2133 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值

SK Hynix GKE800UD102408-2133 8GB

需要考虑的原因
SK Hynix GKE800UD102408-2133 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 68

左右 -196% 更低的延时
更快的写入速度，GB/s

12.0 1,944.9

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

SK Hynix GKE800UD102408-2133 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 23
读取速度，GB/s

3,973.0 17.2
写入速度，GB/s

1,944.9 12.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

673 3017

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB16GS2666.C8ET 16GB

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Crucial Technology BLT4G4D26AFTA.8FADG 4GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

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Kingston ASU21D4U5S1MB-4 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB