takeMS International AG TMS2GB264D082-805G 2GB vs A-DATA Technology AO1P26KCST2-BWWS 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 15.6

测试中的平均数值

A-DATA Technology AO1P26KCST2-BWWS 16GB

需要考虑的原因
A-DATA Technology AO1P26KCST2-BWWS 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的写入速度，GB/s

14.6 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

5,535.6 15.6
写入速度，GB/s

1,852.4 14.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 3136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Patriot Memory (PDP Systems) PSD21G8002 1GB

Patriot Memory (PDP Systems) PSD21G8002 1GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMT64GX4M8Z3600C16 8GB

Corsair CMT64GX4M8Z3600C16 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

G Skill Intl F4-4800C18-8GTRS 8GB

G Skill Intl F4-4800C18-8GTRS 8GB