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takeMS International AG TMS2GB264D082-805G 2GB
Avant Technology J644GU44J1293NF 32GB

takeMS International AG TMS2GB264D082-805G 2GB vs Avant Technology J644GU44J1293NF 32GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 14.4
    测试中的平均数值
Avant Technology J644GU44J1293NF 32GB 需要考虑的原因
Avant Technology J644GU44J1293NF 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 46
    左右 -28% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 6400
    左右 3.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Avant Technology J644GU44J1293NF 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 36
  • 读取速度，GB/s
    5,535.6 left arrow 14.4
  • 写入速度，GB/s
    1,852.4 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 23400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3092

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Avant Technology J644GU44J1293NF 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
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Samsung M378A5244CB0-CTD 4GB
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Corsair CMR16GX4M2C3000C15 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Samsung M378B5173BH0-CH9 4GB
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Samsung M471A1K43CB1-CRC 8GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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G Skill Intl F4-3600C19-8GTZRB 8GB
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Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
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Corsair CMK32GX4M4A2133C15 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston CBD32D4S2S1ME-8 8GB
内存RAM
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Team Group Inc. UD5-6400 16GB
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Crucial Technology CT16G4SFD8266.16FE1 16GB
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AMD R5S38G1601U2S 8GB
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G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
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