takeMS International AG TMS2GB264D082-805G 2GB vs Corsair CM4X16GC3200C16K2 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 15

测试中的平均数值

Corsair CM4X16GC3200C16K2 16GB

需要考虑的原因
Corsair CM4X16GC3200C16K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

7.3 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CM4X16GC3200C16K2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

5,535.6 15.0
写入速度，GB/s

1,852.4 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.01G86.9H50C 1GB

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Apacer Technology 78.CAGP7.C7C0B 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

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A-DATA Technology DQVE1908 512MB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK128GX4M4A2400C16 32GB

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Samsung M378B5673EH1-CF8 2GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB