takeMS International AG TMS2GB264D082-805G 2GB vs Corsair CMV4GX4M1A2400C16 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时
更快的读取速度，GB/s

5 14.9

测试中的平均数值

Corsair CMV4GX4M1A2400C16 4GB

需要考虑的原因
Corsair CMV4GX4M1A2400C16 4GB

报告一个错误

更快的写入速度，GB/s

7.8 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMV4GX4M1A2400C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

5,535.6 14.9
写入速度，GB/s

1,852.4 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Corsair CMV4GX4M1A2400C16 4GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK64GX4M4A2400C16 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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SK Hynix HMA41GR7MFR4N-TFTD 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB