takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology BLS4G4D240FSA.8FADG 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 16.5

测试中的平均数值

Crucial Technology BLS4G4D240FSA.8FADG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的写入速度，GB/s

11.7 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

5,535.6 16.5
写入速度，GB/s

1,852.4 11.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

ASint Technology SSZ302G08-GGNHC 2GB

ASint Technology SSZ302G08-GGNHC 2GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB