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takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
17.8
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
46
左右 -100% 更低的延时
更快的写入速度,GB/s
14.0
1,852.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
23
读取速度,GB/s
5,535.6
17.8
写入速度,GB/s
1,852.4
14.0
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
858
3127
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2666C19-16GIS 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston KCDT82-MIE 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Kingston 9905403-156.A00LF 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Samsung M471A5143EB1-CRC 4GB
Corsair CMK32GX5M2B5600C36 16GB
G Skill Intl F4-2666C18-4GFX 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Golden Empire 1GB DDR2 800 CAS=4 1GB
EVGA 16G-D4-2666-MR 4GB
报告一个错误
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