takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C14-8GTZN 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 19.1

测试中的平均数值

G Skill Intl F4-3600C14-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

13.7 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3600C14-8GTZN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

5,535.6 19.1
写入速度，GB/s

1,852.4 13.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 3091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C14-8GTZN 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Smart Modular SMS4WEC8C1K0446FCG 8GB

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G Skill Intl F4-3600C19-8GSXF 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-4400C16-8GTZR 8GB

A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO10240