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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C16-16GTRS 16GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
G Skill Intl F4-3600C16-16GTRS 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
18
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C16-16GTRS 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
46
左右 -64% 更低的延时
更快的写入速度,GB/s
16.2
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
28
读取速度,GB/s
5,535.6
18.0
写入速度,GB/s
1,852.4
16.2
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
3933
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3600C16-16GTRS 16GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
A-DATA Technology DDR4 2400 16GB
Corsair CM4X4GF2666C16K4 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2400C15-4GVR 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Hexon Technology Pte Ltd HEXON 1GB
Team Group Inc. DDR4 3600 8GB
Kingston 9905471-006.A01LF 4GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
AMD AE34G2139U2 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9905678-121.A00G 8GB
Samsung M378B5273CH0-CH9 4GB
Samsung M378A5244CB0-CVF 4GB
报告一个错误
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Bug description
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