takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C18-16GTRS 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 20.8

测试中的平均数值

G Skill Intl F4-3600C18-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

16.0 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3600C18-16GTRS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

5,535.6 20.8
写入速度，GB/s

1,852.4 16.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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Crucial Technology CT16G4S24AM.M16FE 16GB

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AMD R538G1601U2S-UO 8GB

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PNY Electronics PNY 2GB

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Corsair CMSX4GX4M1A2400C16 4GB

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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Essencore Limited IM4AGU88N24-FFFHA0 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M471A2K43CB1-CRCR 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB