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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C19-16GSXF 16GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
G Skill Intl F4-3600C19-16GSXF 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
18.8
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C19-16GSXF 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
46
左右 -109% 更低的延时
更快的写入速度,GB/s
13.5
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
22
读取速度,GB/s
5,535.6
18.8
写入速度,GB/s
1,852.4
13.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
3310
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3600C19-16GSXF 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMWX16GC3000C16W4D 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Avant Technology F641GU67F9333G 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Kingston HX318C10FK/4 4GB
Kingston KV0M5R-MIE 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA81GS6CJR8N-VK 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-8GTRGC 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
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